为广泛应用于半导体制造领域而优化的高感光度G线正型光刻胶      

High sensitivity broad-band,g-line positive-tone photoresist,optimized for

wide production of semiconductor

 1) 高感光度,高产出率

2) 高附着性,特别为湿法刻蚀工艺改进       

3) 广泛应用于全球半导体行业   

1) Achievement for high sensitivity and high throughput

2) Improvement for wet etching by high adhesion

3) Trust on delivery reference at wide field and industry

前烘：100℃ 60秒 (DHP)

曝光：G线步进式曝光机/接触式曝光机

显影：AZ300MIF (2.38%) 23℃ 60秒 Puddle   

清洗：去离子水30秒

后烘：120℃ 120秒 (DHP)

剥离：AZ剥离液及/或氧等离子体灰化

Pre-bake: 100℃ 60sec.(DHP)

Exposure: g-line stepper and/or Contact Aligner

Developing: AZ300MIF 23℃ 60sec.Puddle

Rinse: DI-water 30sec.

Post-bake: 120℃ 120sec.(DHP)

Stripping: AZ Remover and/or O2 plasma-ashing

Product Name

AZ1500

Viscosity

4.4mPa

20mPa

38mPa

90mPa

Eth

Eop

耐热性(Thermal Stability)

86msec.

94msec.(1.1xEth)

125℃