Glass-to-glass anodic bonding with standard IC technology thin films as intermediate layers

       Depositing a layer on the glass surface of the thin film material such as polysilicon, silicon nitride, or the like as an intermediate layer, when an electric field of about 700V, heated to 400 ℃, make two panes of glass bonded.

A. Berthold , L. Nicola , P.M. Sarro , M.J. Vellekoop